Electron-spin decoherence in bulk and quantum-well zinc-blende semiconductors
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Abstract
A theory for longitudinal (T1) and transverse (T2) electron spin coherence times in zinc-blende semiconductor quantum wells is developed based on a nonperturbative nanostructure model solved in a fourteen-band restricted basis set. Distinctly different dependences of coherence times on mobility, quantization energy, and temperature are found from previous calculations. Quantitative agreement between our calculations and measurements is found for GaAs/AlGaAs, InGaAs/InP, and GaSb/AlSb quantum wells.
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Olesberg</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Department of Physics and Astronomy, University of Iowa, Iowa City</wicri:cityArea></affiliation></author><author><name sortKey="Flatte, Michael E" uniqKey="Flatte M">Michael E. Flatte</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Department of Physics and Astronomy, University of Iowa, Iowa City</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0426462</idno><date when="2001-10-15">2001-10-15</date><idno type="stanalyst">PASCAL 01-0426462 AIP</idno><idno type="RBID">Pascal:01-0426462</idno><idno type="wicri:Area/Main/Corpus">010676</idno><idno type="wicri:Area/Main/Repository">00FD12</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Band structure</term><term>Carrier mobility</term><term>Electron spin-lattice relaxation</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Semiconductor quantum wells</term><term>Spin-spin relaxation</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7225R</term><term>Etude théorique</term><term>Semiconducteur III-V</term><term>Puits quantique semiconducteur</term><term>Gallium arséniure</term><term>Aluminium composé</term><term>Indium composé</term><term>Gallium composé</term><term>Relaxation spin électronique réseau</term><term>Relaxation spin spin</term><term>Structure bande</term><term>Mobilité porteur charge</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A theory for longitudinal (T<sub>1</sub>) and transverse (T<sub>2</sub>) electron spin coherence times in zinc-blende semiconductor quantum wells is developed based on a nonperturbative nanostructure model solved in a fourteen-band restricted basis set. 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T.)</s1></fA11><fA11 i1="03" i2="1"><s1>FLATTE (Michael E.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s2>161301-161301-4</s2></fA20><fA21><s1>2001-10-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0426462</s0></fA47><fA60><s1>P</s1><s3>CR</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>A theory for longitudinal (T<sub>1</sub>) and transverse (T<sub>2</sub>) electron spin coherence times in zinc-blende semiconductor quantum wells is developed based on a nonperturbative nanostructure model solved in a fourteen-band restricted basis set. 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